SPP15P10PLGHKSA1 Infineon | Infineon agency

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Mfr. #：

SPP15P10PLGHKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Tongkou P channel 100 V 15A (TC) 128W (TC) PG-TO220-3

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	SIPMOS?
Package	Device
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	15A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (max) at Id, Vgs	200 milliohms @ 11.3A, 10V
Vgs(th) (max) at Id	2V @ 1.54mA
Gate Charge?(Qg) (max) at Vgs	62 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	1490 pF @ 25 V
FET function	-
Power dissipation (max)	128W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Through hole
Supplier device package	PG-TO220-3
Package/case	TO-220-3

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