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IPD50R399CP Image

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Mfr. #:
IPD50R399CP
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 550 V 9A (Tc) 83W (Tc) PG-TO252-3-11
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 550 V
Current at 25°C - Continuous Drain (Id) 9A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 399 mOhm @ 4.9A, 10V
Vgs(th) (max) at Id 3.5V @ 330μA
Gate Charge?(Qg) (max) at Vgs 23 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 890 pF @ 100 V
FET Function -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package/Case TO-252-3, DPak (2-Lead Tab), SC-63
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