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IPI90R800C3XKSA1 Image

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Mfr. #:
IPI90R800C3XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Tongkou N channel 900 V 6.9A (TC) 104W (TC) PG-TO262-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS?
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 900 V
Current at 25°C - Continuous Drain (Id) 6.9A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 800 mOhm @ 4.1A, 10V
Vgs(th) (max) at Id 3.5V @ 460μA
Gate Charge?(Qg) (max) at Vgs 42 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 1100 pF @ 100 V
FET Function -
Power Dissipation (max) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package/Case TO-262-3, Long Lead, I2Pak, TO-262AA
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