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IPP05CN10L G Image

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Mfr. #:
IPP05CN10L G
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Tongkou N channel 100 V 100A (TC) 300W (TC) PG-TO220-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Package Device
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 100A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 5.1 milliohms @ 100A, 10V
Vgs(th) (max) at Id 2.4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 163 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 15600 pF @ 50 V
FET function -
Power dissipation (max) 300W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package PG-TO220-3
Package/case TO-220-3
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