IPP100P03P3L-04 Infineon | Infineon agency

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Mfr. #：

IPP100P03P3L-04

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole P channel 30 V 100A (Tc) 200W (Tc) PG-TO220-3-1

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Package	Device
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	30 V
Current at 25°C - Continuous Drain (Id)	100 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5 V, 10 V
On-Resistance (max) at Id, Vgs	4.3 mOhm @ 80 A, 10 V
Vgs(th) (max) at Id	2.1 V @ 475 μA
Gate Charge?(Qg) (max) at Vgs	200 nC @ 10 V
Vgs (max)	5V, -16V
Input capacitance (Ciss) (max) at different Vds	9300 pF @ 25 V
FET function	-
Power dissipation (max)	200W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Through hole
Supplier device package	PG-TO220-3-1
Package/case	TO-220-3

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