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IPB80N06S2L09ATMA1 Image

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Mfr. #:
IPB80N06S2L09ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 55 V 80A (Tc) 190W (Tc) PG-TO263-3-2
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 55 V
Current at 25°C - Continuous Drain (Id) 80 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On-Resistance (max) at Id, Vgs 8.2 mOhm @ 52 A, 10 V
Vgs(th) (max) at Id 2 V @ 125 μA
Gate Charge?(Qg) (max) at Vgs 105 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (max) 2620 pF @ 25 V
FET Function -
Power Dissipation (max) 190W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package/Case TO-263-3, D2Pak (2-Lead Tab), TO-263AB
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