LOGO
LOGO
IRFSL33N15DTRRP Image

img for reference only

Mfr. #:
IRFSL33N15DTRRP
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 150 V 33A (Tc) 3.8W (Ta), 170W (Tc) TO-262
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 150 V
Current at 25°C - Continuous Drain (Id) 33A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 56 mOhm @ 20A, 10V
Vgs(th) (max) at Id 5.5V @ 250μA
Gate Charge?(Qg) (max) at Vgs 90 nC @ 10 V
Vgs (max) ±30V
Various Vds Input Capacitance (Ciss) (max) 2020 pF @ 25 V
FET Function -
Power Dissipation (max) 3.8W (Ta), 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package/Case TO-262-3, Long Lead, I2Pak, TO-262AA
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd