IRF6710S2TRPBF Infineon | Infineon agency

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Mfr. #：

IRF6710S2TRPBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N-channel 25 V 12A (Ta), 37A (Tc) 1.8W (Ta), 15W (Tc) DirectFET? Isocapacitive S1

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	25 V
Current at 25°C - Continuous Drain (Id)	12A (Ta), 37A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (Max) @ Id, Vgs	5.9 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	2.4V @ 25μA
Gate Charge?(Qg) (Max) @ Vgs	13 nC @ 4.5 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	1190 pF @ 13 V
FET function	-
Power dissipation (max)	1.8W (Ta), 15W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Surface mount
Supplier device package	DirectFET? Isocapacitive S1
Package/case	DirectFET? Isocapacitive S1

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