LOGO
LOGO
IDH06G65C6 Image

img for reference only

Mfr. #:
IDH06G65C6
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
2
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Schottky Diode
Diode Configuration Standalone
DC Reverse Withstand Voltage(Vr) 650V
Average Rectified Current(Io) 16A
Forward Voltage Drop(Vf) 1.25V@6A
Reverse Current(Ir) 600nA@420V
Related models
  • IAUC120N04S6N009ATMA1

    Power MOSFET, N-channel, 40 V, 120 A, 750 μohm, TDSON, SMT

  • IRF3415PBF

    Power MOSFET, N-Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole

  • IRLML2803TRPBF

    Power MOSFET, N-Channel, 30 V, 850 mA, 0.3 ohm, SOT-23, Surface Mount

  • IPD90P03P4L04ATMA1

    Power MOSFET, P-Channel, 30 V, 90 A, 0.0033 ohm, TO-252 (DPAK), Surface Mount

  • IPD60R380C6ATMA1

    Power MOSFET, N-channel, 600 V, 10.6 A, 0.34 ohm, TO-252 (DPAK), Surface mount

  • IPD30N10S3L34ATMA1

    Power MOSFET, N-Channel, 100 V, 30 A, 0.0258 ohm, TO-252 (DPAK), Surface Mount

  • BSZ900N15NS3GATMA1

    Power MOSFET, N-Channel, 150 V, 13 A, 0.074 ohm, TSDSON, Surface Mount

  • IRLL024NTRPBF

    Power MOSFET, N-Channel, 55 V, 3.1 A, 0.065 ohm, SOT-223, Surface Mount

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd