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IRLBD59N04ETRLP Image

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Mfr. #:
IRLBD59N04ETRLP
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 40 V 59A (Tc) 130W (Tc) TO-263-5
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 40 V
Current at 25°C - Continuous Drain (Id) 59A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 5V, 10V
On-Resistance (max) at Id, Vgs 18 mOhm @ 35A, 10V
Vgs(th) (max) at Id 2V @ 250μA
Gate Charge?(Qg) (max) at Vgs 50 nC @ 5 V
Vgs (max) ±10V
Various Vds Input Capacitance (Ciss) (max) 2190 pF @ 25 V
FET Function -
Power Dissipation (max) 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263-5
Package/Case TO-263-6, D2Pak (5-Lead Tab), TO-263BA
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