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IRF7701GTRPBF Image

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Mfr. #:
IRF7701GTRPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface Mount Type P Channel 12 V 10A (Ta) 1.5W (Ta) 8-TSSOP
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Packaging Tape and Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 12 V
Current at 25°C - Continuous Drain (Id) 10A (Ta)
Drive Voltage (Rds On Max, Rds On Min) 1.8V, 4.5V
On-Resistance (max) at Id, Vgs 11 milliohms @ 10A, 4.5V
Vgs(th) (max) at Id 1.2V @ 250μA
Gate Charge?(Qg) (max) at Vgs 100 nC @ 4.5 V
Vgs (max) ±8V
Input capacitance (Ciss) (max) 5050 pF @ 10 V
FET function -
Power dissipation (max) 1.5W (Ta)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package 8-TSSOP
Package/case 8-TSSOP (0.173", 4.40mm width)
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