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IRFU2307ZPBF Image

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Mfr. #：
IRFU2307ZPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 75 V 42A (Tc) 110W (Tc) IPAK (TO-251AA)
Datasheet:
Datasheet
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 75 V
Current at 25°C - Continuous Drain (Id) 42A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 16 mOhm @ 32A, 10V
Vgs(th) (max) at Id 4V @ 100μA
Gate Charge?(Qg) (max) at Vgs 75 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 2190 pF @ 25 V
FET Function -
Power Dissipation (max) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package IPAK (TO-251AA)
Package/Case TO-251-3 Short Lead, IPak, TO-251AA
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