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IRF1310NSTRRPBF Image

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Mfr. #:
IRF1310NSTRRPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 100 V 42A (Tc) 3.8W (Ta), 160W (Tc) D2PAK
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 42A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 36 mOhm @ 22A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 110 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 1900 pF @ 25 V
FET Function -
Power Dissipation (max) 3.8W (Ta), 160W (Tc)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package/Case TO-263-3, D2Pak (2-Lead Tab), TO-263AB
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