LOGO
LOGO
BAR6302VH6327XTSA1 Image

img for reference only

Mfr. #:
BAR6302VH6327XTSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Diode - RF PIN - Single 50V 100 mA 250 mW PG-SC79-2
Datasheet:
In Stock:
24960
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series -
Packaging Tape and Reel (TR)
Diode Type PIN - Single
Voltage - Peak Reverse (max) 50V
Current - max 100 mA
Capacitance at Vr, F 0.3pF @ 5V, 1MHz
Resistance at If, F 1 Ohm @ 10mA, 100MHz
Power Dissipation (max) 250 mW
Operating Temperature 150°C (TJ)
Package/Case SC-79, SOD-523
Supplier Device Package PG-SC79-2
Related models
  • TLI4970D025T5XUMA1

    Current sensor, SPI, 18 kHz, TISON, 8-pin, 3.1 V, 3.5 V

  • BSC057N08NS3GATMA1

    Power MOSFET, N-Channel, 80 V, 100 A, 0.0047 ohm, TDSON, SMT

  • IPB120P04P4L03ATMA1

    Power MOSFET, P-Channel, 40 V, 120 A, 0.0026 ohm, TO-263 (D2PAK), Surface Mount

  • IRF7103TRPBF

    Dual MOSFET, N-Channel, 50 V, 3 A, 0.11 ohm, SOIC, Surface Mount

  • IRF9540NPBF

    Power MOSFET, P-Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

  • IRF4905STRLPBF

    Power MOSFET, P-Channel, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), Surface Mount

  • BSC059N04LSGATMA1

    Power MOSFET, N-Channel, 40 V, 73 A, 0.0049 ohm, PG-TDSON, SMT

  • IRF5210PBF

    Power MOSFET, P-Channel, 100 V, 40 A, 0.06 ohm, TO-220AB, Through Hole

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd