IRL8113STRRPBF Infineon | Infineon agency

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Mfr. #：

IRL8113STRRPBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface Mount N Channel 30 V 105A (Tc) 110W (Tc) D2PAK

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	30 V
Current at 25°C - Continuous Drain (Id)	105A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (Max) at Different Id, Vgs	6 milliohms @ 21A, 10V
Vgs(th) (Max) at Different Id	2.25V @ 250μA
Gate Charge?(Qg) (Max) at Different Vgs	35 nC @ 4.5 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	2840 pF @ 15 V
FET function	-
Power dissipation (max)	110W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Surface mount
Supplier device package	D2PAK
Package/case	TO-263-3, D2Pak (2-lead tab), TO-263AB

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