SPU11N10 Infineon | Infineon agency

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Mfr. #：

SPU11N10

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 100 V 10.5A (Tc) 50W (Tc) P-TO251-3-1

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	SIPMOS?
Package	Device
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	10.5A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	170 mOhm @ 7.8A, 10V
Vgs(th) (max) at Id	4V @ 21μA
Gate Charge?(Qg) (max) at Vgs	18.3 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (max)	400 pF @ 25 V
FET Function	-
Power Dissipation (max)	50W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	P-TO251-3-1
Package/Case	TO-251-3 Short Lead, IPak, TO-251AA

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