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SPU18P06P Image

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Mfr. #:
SPU18P06P
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole P channel 60 V 18.6A (Tc) PG-TO251-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series SIPMOS?
Package Device
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 18.6A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 130 mOhm @ 13.2A, 10V
Vgs(th) (max) at Id 4V @ 1mA
Gate Charge?(Qg) (max) at Vgs 33 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 860 pF @ 25 V
FET Function -
Power Dissipation (max) -
Operating Temperature -
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package/Case TO-251-3 Short Lead, IPak, TO-251AA
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