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BSP295L6327HTSA1 Image

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Mfr. #:
BSP295L6327HTSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 60 V 1.8A (Ta) 1.8W (Ta) PG-SOT223-4-21
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series SIPMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 1.8A (Ta)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 300 milliohms @ 1.8A, 10V
Vgs(th) (max) at Id 1.8V @ 400μA
Gate Charge?(Qg) (max) at Vgs 17 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 368 pF @ 25 V
FET function -
Power dissipation (max) 1.8W (Ta)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-SOT223-4-21
Package/case TO-261-4, TO-261AA
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