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SPI80N06S2L-05 Image

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Mfr. #：
SPI80N06S2L-05
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 55 V 80A (Tc) 300W (Tc) PG-TO262-3-1
Datasheet:
Datasheet
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Package Device
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 55 V
Current at 25°C - Continuous Drain (Id) 80 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On-Resistance (max) at Id, Vgs 4.8 mOhm @ 80 A, 10 V
Vgs(th) (max) at Id 2 V @ 250 μA
Gate Charge?(Qg) (max) at Vgs 230 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (max) 7530 pF @ 25 V
FET Function -
Power Dissipation (max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package/Case TO-262-3, Long Lead, I2Pak, TO-262AA
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