SPP20N65C3HKSA1 Infineon | Infineon agency

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Mfr. #：

SPP20N65C3HKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 650 V 20.7A (Tc) 208W (Tc) PG-TO220-3-1

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS?
Package	Dip
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	650 V
Current at 25°C - Continuous Drain (Id)	20.7A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	190 mOhm @ 13.1A, 10V
Vgs(th) (max) at Id	3.9V @ 1mA
Gate Charge?(Qg) (max) at Vgs	114 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (Max)	2400 pF @ 25 V
FET Function	-
Power Dissipation (Max)	208W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package/Case	TO-220-3

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