IPU10N03LA G Infineon | Infineon agency

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Mfr. #：

IPU10N03LA G

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 25 V 30A (Tc) 52W (Tc) P-TO251-3-1

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Package	Device
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	25 V
Current at 25°C - Continuous Drain (Id)	30 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5 V, 10 V
On-Resistance (max) at Id, Vgs	10.4 mOhm @ 30 A, 10 V
Vgs(th) (max) at Id	2 V @ 20 μA
Gate Charge?(Qg) (max) at Vgs	11 nC @ 5 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (max)	1358 pF @ 15 V
FET Function	-
Power Dissipation (max)	52W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	P-TO251-3-1
Package/Case	TO-251-3 Short Lead, IPak, TO-251AA

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