LOGO
LOGO
SPP80N10L Image

img for reference only

Mfr. #:
SPP80N10L
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 100 V 80A (Tc) 250W (Tc) PG-TO220-3-1
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series SIPMOS?
Package Device
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 80A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 14 milliohms @ 58A, 10V
Vgs(th) (max) at Id 2V @ 2mA
Gate Charge?(Qg) (max) at Vgs 240 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 4540 pF @ 25 V
FET Function -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package/Case TO-220-3
Related models
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd