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SPU01N60C3BKMA1 Image

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Mfr. #:
SPU01N60C3BKMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 650 V 800mA (Tc) 11W (Tc) PG-TO251-3-21
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS?
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 800 mA (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 6 Ohm @ 500 mA, 10 V
Vgs(th) (max) at Id 3.9 V @ 250 μA
Gate Charge?(Qg) (max) at Vgs 5 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (max) 100 pF @ 25 V
FET Function -
Power Dissipation (max) 11W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3-21
Package/Case TO-251-3 Short Lead, IPak, TO-251AA
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