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Mfr. #:
BUZ73AL
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 200 V 5.5A (Tc) 40W (Tc) PG-TO220-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series SIPMOS?
Package Dip
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 200 V
Current at 25°C - Continuous Drain (Id) 5.5A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 5V
On-Resistance (max) at Id, Vgs 600 mOhm @ 3.5A, 5V
Vgs(th) (max) at Id 2V @ 1mA
Vgs (max) ±20V
Input Capacitance (Ciss) (max) at Vds 840 pF @ 25 V
FET Function -
Power dissipation (max) 40W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Through hole
Supplier Device package PG-TO220-3
Package/case TO-220-3
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