SPB100N08S2-07 Infineon | Infineon agency

img for reference only

Mfr. #：

SPB100N08S2-07

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 75 V 100A (Tc) 300W (Tc) PG-TO263-3-2

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	75 V
Current at 25°C - Continuous Drain (Id)	100A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	6.8 mOhm @ 66A, 10V
Vgs(th) (max) at Id	4V @ 250μA
Gate Charge?(Qg) (max) at Vgs	200 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (Max)	6020 pF @ 25 V
FET Function	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package/Case	TO-263-3, D2Pak (2-Lead Tab), TO-263AB

IPT004N03LATMA1

IPT004N03L Series 30 V 300 A SMT OptiMOSTM Power-MOSFET - PG-HSOF-8
IPT007N06NATMA1

IPT007N06N Series 60 V 0.75 mOhm N-Channel OptiMOS? Power-Transistor - PG-HSOF-8-1
IPT008N06NM5LFATMA1

60v, 454A, .8mohm, PG-HSOF-8, N-CH
IPT012N08N5ATMA1

N-Channel 80 V 300 A 1.2 mΩ 178 nC OptiMOS 5 Power Transistor - HSOF-8
IPT020N10N3ATMA1

IPT020N10N3 Series 100 V 2 mOhm N-Channel OptiMOS?3 Power-Transistor - PG-HSOF-8-1
IPT020N10N5ATMA1

N-Channel 100 V 260 A 273 W SMT OptiMOSTM5 Power Transistor - PG-HSOF-8
IPT026N10N5ATMA1

100V, 202A, 2.6mOhm, N-Channel, HSOF-8
IPT059N15N3ATMA1

IPT059N15N3 Series 150 V 5.9 mOhm N-Channel OptiMOS?3 Power-Transistor - PG-HSOF-8-1