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IPP120N06NGAKSA1 Image

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Mfr. #:
IPP120N06NGAKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 60 V 75A (Tc) 158W (Tc) PG-TO220-3-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Package Device
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 75 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 12 mOhm @ 75 A, 10 V
Vgs(th) (max) at Id 4 V @ 94 μA
Gate Charge?(Qg) (max) at Vgs 62 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 2100 pF @ 30 V
FET Function -
Power Dissipation (Max) 158W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package/Case TO-220-3
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