BSC022N03S Infineon | Infineon agency

img for reference only

Mfr. #：

BSC022N03S

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 30 V 28A (Ta), 100A (Tc) 2.8W (Ta), 104W (Tc) PG-TDSON-8-1

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	30 V
Current at 25°C - Continuous Drain (Id)	28A (Ta), 100A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (max) at Id, Vgs	2.2 mOhm @ 50A, 10V
Vgs(th) (max) at Id	2V @ 100μA
Gate Charge?(Qg) (max) at Vgs	58 nC @ 5 V
Vgs (max)	±20V
Input capacitance (Ciss) (max) at different Vds	7490 pF @ 15 V
FET function	-
Power dissipation (max)	2.8W (Ta), 104W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TDSON-8-1
Package/case	8-PowerTDFN

IRFB4615PBF

Power MOSFET, N-Channel, 150 V, 35 A, 0.032 ohm, TO-220AB, Through Hole
IRLML2060TRPBF

Power MOSFET, N-Channel, 60 V, 1.2 A, 0.356 ohm, SOT-23, Surface Mount
IRLZ24NPBF

Power MOSFET, N-channel, 55 V, 18 A, 0.06 ohm, TO-220AB, Through Hole
IRF1407STRLPBF

Power MOSFET, N-Channel, 75 V, 100 A, 0.0078 ohm, TO-263 (D2PAK), Surface Mount
IPP65R190C6XKSA1

Power MOSFET, N-channel, 650 V, 20.2 A, 0.17 ohm, TO-220, Through Hole
BSR315PH6327XTSA1

Power MOSFET, P-Channel, 60 V, 620 mA, 0.62 ohm, SC-59, Surface Mount
IRF7503TRPBF

Dual MOSFET, N-Channel, 30 V, 2.4 A, 0.135 ohm, μSOIC, Surface Mount
IRF7470TRPBF

Power MOSFET, N-Channel, 40 V, 10 A, 0.009 ohm, SOIC, Surface Mount