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IPP03N03LB G Image

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Mfr. #:
IPP03N03LB G
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 30 V 80A (Tc) 150W (Tc) PG-TO220-3-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
OptiMOS?
Fittings
Discontinued
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 30 V
Current at 25°C - Continuous Drain (Id) 80 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On-Resistance (max) at Id, Vgs 3.1 mOhm @ 55 A, 10 V
Vgs(th) (max) at Id 2 V @ 100 μA
Gate Charge?(Qg) (max) at Vgs 59 nC @ 5 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 7624 pF @ 15 V
FET Function -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
IPP03N
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