BSS139 E6327 Infineon | Infineon agency

img for reference only

Mfr. #：

BSS139 E6327

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 250 V 100mA (Ta) 360mW (Ta) PG-SOT23

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	SIPMOS?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	250 V
Current at 25°C - Continuous Drain (Id)	100 mA (Ta)
Drive Voltage (Rds On Max, Rds On Min)	0 V, 10 V
On-Resistance (max) at different Id, Vgs	14 Ohms @ 0.1 mA, 10 V
Vgs(th) (max) at different Id	1 V @ 56 μA
Gate Charge?(Qg) (max) at different Vgs	3.5 nC @ 5 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (Max)	76 pF @ 25 V
FET Function	Depletion Mode
Power Dissipation (Max)	360 mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT23
Package/Case	TO-236-3, SC-59, SOT-23-3

IRS2509C

Gate Driver IC
IRS2509CD

Gate Driver IC
IRS26320C

Gate Driver IC
IRS26320JPBF

Half-bridge Gate Driver IC Non-Inverting 44-PLCC
IRG7T200HF12B

IGBT Module Half Bridge 1200 V 400 A 1060 W Base Mount POWIR? 62
IRG7T300CH12B

IGBT module single channel 1200 V 570 A 1600 W base mounted POWIR? 62
IRG7T300CL12B

IGBT module single channel 1200 V 570 A 1600 W base mounted POWIR? 62
IRG7T300HF12B

IGBT Module Half Bridge 1200 V 570 A 1600 W Base Mount POWIR? 62