LOGO
LOGO
IPD50P04P4L11ATMA2 Image

img for reference only

Mfr. #:
IPD50P04P4L11ATMA2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Power MOSFET, P-Channel, 40 V, 50 A, 0.0082 ohm, TO-252 (DPAK), Surface Mount
Datasheet:
In Stock:
80964
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel Type -
Drain-Source Voltage, Vds 40V
Current, Id Continuous 50A
Drain-Source On-State Resistance 0.0082ohm
Related models
  • SGP30N60HSXKSA1

    IGBT NPT 600 V 41 A 250 W Through hole PG-TO220-3-1

  • SGW10N60AFKSA1

    IGBT NPT 600 V 20 A 92 W Through hole PG-TO247-3-1

  • SGW15N120FKSA1

    IGBT NPT 1200 V 30 A 198 W Through hole PG-TO247-3-1

  • IHW40T60FKSA1

    IGBT groove-type field as dead as 600 V 80 A 303 W-pass hole PG-TO247-3-1

  • IHY15N120R3XKSA1

    IGBT Trench 1200 V 30 A 254 W Through Hole PG-TO247HC-3

  • IHY20N120R3XKSA1

    IGBT Trench 1200 V 40 A 310 W Through Hole PG-TO247HC-3

  • BC 846PN H6727

    Transistor - Bipolar (BJT) - Array NPN, PNP 65V 100mA 250MHz 250mW Surface Mount PG-SOT363-PO

  • BC847SH6359XTMA1

    Transistor - Bipolar (BJT) - Array 2 NPN (Dual) 45V 100mA 250MHz 250mW Surface Mount PG-SOT363-PO

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd