IRF6691TR1PBF Infineon | Infineon agency

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Mfr. #：

IRF6691TR1PBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N-channel 20 V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) DIRECTFET? MT

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	20 V
Current at 25°C - Continuous Drain (Id)	32A (Ta), 180A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (max) at Id, Vgs	1.8 milliohms @ 15A, 10V
Vgs(th) (max) at Id	2.5V @ 250μA
Gate Charge?(Qg) (max) at Vgs	71 nC @ 4.5 V
Vgs (max)	±12V
Input capacitance (Ciss) (max)	6580 pF @ 10 V
FET function	-
Power dissipation (max)	2.8W (Ta), 89W (Tc)
Operating temperature	-40°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	DIRECTFET? MT
Package/case	DirectFET? Isocapacitive MT

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