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BSP123E6327T Image

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Mfr. #:
BSP123E6327T
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 100 V 370 mA (Ta) 1.79 W (Ta) PG-SOT223-4
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series SIPMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 370mA (Ta)
Drive Voltage (Rds On Max, Rds On Min) 2.8V, 10V
On-Resistance (Max) at Different Id, Vgs 6 Ohm @ 370mA, 10V
Vgs(th) (Max) at Different Id 1.8V @ 50μA
Gate Charge?(Qg) (Max) at Different Vgs 2.4 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 70 pF @ 25 V
FET function -
Power dissipation (max) 1.79W (Ta)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-SOT223-4
Package/case TO-261-4, TO-261AA
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