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BSP129E6327T Image

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Mfr. #:
BSP129E6327T
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 240 V 350 mA (Ta) 1.8 W (Ta) PG-SOT223-4
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series SIPMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 240 V
Current at 25°C - Continuous Drain (Id) 350 mA (Ta)
Drive Voltage (Rds On Max, Rds On Min) 0 V, 10 V
On-Resistance (max) at different Id, Vgs 6 ohms @ 350 mA, 10 V
Vgs(th) (max) at different Id 1 V @ 108 μA
Gate Charge?(Qg) (max) at different Vgs 5.7 nC @ 5 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 108 pF @ 25 V
FET Function Depletion Mode
Power Dissipation (Max) 1.8 W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package/Case TO-261-4, TO-261AA
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