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IRLL3303PBF Image

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Mfr. #:
IRLL3303PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 30 V 4.6A (Ta) 1W (Ta) SOT-223
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 30 V
Current at 25°C - Continuous Drain (Id) 4.6 A (Ta)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On-Resistance (max) at Id, Vgs 31 mOhm @ 4.6 A, 10 V
Vgs(th) (max) at Id 1 V @ 250 μA
Gate Charge?(Qg) (max) at Vgs 50 nC @ 10 V
Vgs (max) ±16 V
Various Vds Input Capacitance (Ciss) (Max) 840 pF @ 25 V
FET Function -
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package/Case TO-261-4, TO-261AA
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