IRF7807D1PBF Infineon | Infineon agency

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Mfr. #：

IRF7807D1PBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface Mount N Channel 30 V 8.3A (Ta) 2.5W (Ta) 8-SO

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	FETKY?
Package	Tube
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	30 V
Current at 25°C - Continuous Drain (Id)	8.3A (Ta)
Drive Voltage (Rds On Max, Rds On Min)	4.5V
On-Resistance (max) at Id, Vgs	25 milliohms @ 7A, 4.5V
Vgs(th) (max) at Id	1V @ 250μA
Gate Charge?(Qg) (max) at Vgs	17 nC @ 5 V
Vgs (max)	±12V
FET Function	Schottky diode (isolated)
Power dissipation (max)	2.5W (Ta)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	8-SO
Package/case	8-SOIC (0.154", 3.90mm width)

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