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IRF7822PBF Image

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Mfr. #:
IRF7822PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface Mount N Channel 30 V 18A (Ta) 3.1W (Ta) 8-SO
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 30 V
Current at 25°C - Continuous Drain (Id) 18A (Ta)
Drive Voltage (Rds On Max, Rds On Min) 4.5V
On-Resistance (max) at Id, Vgs 6.5 milliohms @ 15A, 4.5V
Vgs(th) (max) at Id 1V @ 250μA
Gate Charge?(Qg) (max) at Vgs 60 nC @ 5 V
Vgs (max) ±12V
Various Vds Input Capacitance (Ciss) (Max) 5500 pF @ 16 V
FET Function -
Power Dissipation (Max) 3.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package/Case 8-SOIC (0.154", 3.90mm Width)
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