IRF3717PBF Infineon | Infineon agency

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Mfr. #：

IRF3717PBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface Mount N Channel 20 V 20A (Ta) 2.5W (Ta) 8-SO

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	20 V
Current at 25°C - Continuous Drain (Id)	20 A (Ta)
Drive Voltage (Rds On Max, Rds On Min)	4.5 V, 10 V
On-Resistance (max) at Id, Vgs	4.4 mOhm @ 20 A, 10 V
Vgs(th) (max) at Id	2.45 V @ 250 μA
Gate Charge?(Qg) (max) at Vgs	33 nC @ 4.5 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (Max)	2890 pF @ 10 V
FET Function	-
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package/Case	8-SOIC (0.154", 3.90mm Width)

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