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IRF3717PBF Image

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Mfr. #:
IRF3717PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface Mount N Channel 20 V 20A (Ta) 2.5W (Ta) 8-SO
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 20 V
Current at 25°C - Continuous Drain (Id) 20 A (Ta)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On-Resistance (max) at Id, Vgs 4.4 mOhm @ 20 A, 10 V
Vgs(th) (max) at Id 2.45 V @ 250 μA
Gate Charge?(Qg) (max) at Vgs 33 nC @ 4.5 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 2890 pF @ 10 V
FET Function -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package/Case 8-SOIC (0.154", 3.90mm Width)
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