IRL1004LPBF Infineon | Infineon agency

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Mfr. #：

IRL1004LPBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 40 V 130A (Tc) 3.8W (Ta), 200W (Tc) TO-262

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	40 V
Current at 25°C - Continuous Drain (Id)	130A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (max) at Id, Vgs	6.5 milliohms @ 78A, 10V
Vgs(th) (max) at Id	1V @ 250μA
Gate Charge?(Qg) (max) at Vgs	100 nC @ 4.5 V
Vgs (max)	±16V
Various Vds Input Capacitance (Ciss) (max)	5330 pF @ 25 V
FET Function	-
Power Dissipation (max)	3.8W (Ta), 200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package/Case	TO-262-3, Long Lead, I2Pak, TO-262AA

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