IRLU3714ZPBF Infineon | Infineon agency

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Mfr. #：

IRLU3714ZPBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through Hole N Channel 20 V 37A (Tc) 35W (Tc) I-PAK

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	20 V
Current at 25°C - Continuous Drain (Id)	37A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (max) at Id, Vgs	15 milliohms @ 15A, 10V
Vgs(th) (max) at Id	2.55V @ 250μA
Gate Charge?(Qg) (max) at Vgs	7.1 nC @ 4.5 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	560 pF @ 10 V
FET function	-
Power dissipation (max)	35W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Through hole
Supplier device package	I-PAK
Package/case	TO-251-3 short lead, IPak, TO-251AA

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