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IRFR9N20DPBF Image

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Mfr. #:
IRFR9N20DPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface Mount N Channel 200 V 9.4A (Tc) 86W (Tc) D-Pak
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 200 V
Current at 25°C - Continuous Drain (Id) 9.4A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 380 mOhm @ 5.6A, 10V
Vgs(th) (max) at Id 5.5V @ 250μA
Gate Charge?(Qg) (max) at Vgs 27 nC @ 10 V
Vgs (max) ±30V
Various Vds Input Capacitance (Ciss) (Max) 560 pF @ 25 V
FET Function -
Power Dissipation (Max) 86W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package/Case TO-252-3, DPak (2-Lead Tab), SC-63
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