LOGO
LOGO
IRL3302PBF Image

img for reference only

Mfr. #:
IRL3302PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 20 V 39A (Tc) 57W (Tc) TO-220AB
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 20 V
Current at 25°C - Continuous Drain (Id) 39A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 7V
On-Resistance (Max) at Different Id, Vgs 20 milliohms @ 23A, 7V
Vgs(th) (Max) at Different Id 700mV @ 250μA (Min)
Gate Charge?(Qg) (Max) at Different Vgs 31 nC @ 4.5 V
Vgs (max) ±10V
Input capacitance (Ciss) (max) 1300 pF @ 15 V
FET function -
Power dissipation (max) 57W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package TO-220AB
Package/case TO-220-3
Related models
  • IRF7457TRPBF

    Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8

  • IRF7458TRPBF

    Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8

  • IRF7463TRPBF

    Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8

  • IRF7465TRPBF

    Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8

  • IRF7469TRPBF

    Transistor: N-MOSFET; unipolar; 40V; 9A; 2.5W; SO8

  • IRF7470TRPBF

    Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8

  • IRF7473TRPBF

    Transistor: N-MOSFET; unipolar; 100V; 6.9A; 2.5W; SO8

  • IRF7476TRPBF

    Transistor: N-MOSFET; unipolar; 12V; 15A; 2.5W; SO8

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd