IRF3706SPBF Infineon | Infineon agency

img for reference only

Mfr. #：

IRF3706SPBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface Mount N Channel 20 V 77A (Tc) 88W (Tc) D2PAK

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	20 V
Current at 25°C - Continuous Drain (Id)	77A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	2.8V, 10V
On-Resistance (max) at Id, Vgs	8.5 milliohms @ 15A, 10V
Vgs(th) (max) at Id	2V @ 250μA
Gate Charge?(Qg) (max) at Vgs	35 nC @ 4.5 V
Vgs (max)	±12V
Various Vds Input Capacitance (Ciss) (Max)	2410 pF @ 10 V
FET Function	-
Power Dissipation (Max)	88W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package/Case	TO-263-3, D2Pak (2-Lead Tab), TO-263AB

CY7C1312KV18-250BZI

IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; -40÷85°C; 1.7÷1.9VDC
CY7C1049GN30-10VXI

IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel; -40÷85°C
CY7C1049GN30-10VXIT

IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel; -40÷85°C
CY7C1325G-133AXC

IC: SRAM memory; 4MbSRAM; 256kx18bit; TQFP100; parallel; 0÷70°C; 3.135÷3.6VDC
CY7C1051H30-10BVXI

IC: SRAM memory; 8MbSRAM; 512kx16bit; 10ns; VFBGA48; parallel; -40÷85°C
CY7C1051H30-10ZSXI

IC: SRAM memory; 8MbSRAM; 512kx16bit; 10ns; TSOP44 II; parallel; -40÷85°C
CY7C1051H30-10BVXIT

IC: SRAM memory; 8MbSRAM; 512kx16bit; 10ns; VFBGA48; parallel; -40÷85°C
CY7C1051H30-10ZSXIT

IC: SRAM memory; 8MbSRAM; 512kx16bit; 10ns; TSOP44 II; parallel; -40÷85°C