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IRL3102PBF Image

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Mfr. #:
IRL3102PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 20 V 61A (Tc) 89W (Tc) TO-220AB
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 20 V
Current at 25°C - Continuous Drain (Id) 61A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 7V
On-Resistance (Max) at Different Id, Vgs 13 milliohms @ 37A, 7V
Vgs(th) (Max) at Different Id 700mV @ 250μA (Min)
Gate Charge?(Qg) (Max) at Different Vgs 58 nC @ 4.5 V
Vgs (max) ±10V
Input capacitance (Ciss) (max) 2500 pF @ 15 V
FET function -
Power dissipation (max) 89W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package TO-220AB
Package/case TO-220-3
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