IRF630NLPBF Infineon | Infineon agency

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Mfr. #：

IRF630NLPBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 200 V 9.3A (Tc) 82W (Tc) TO-262

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	200 V
Current at 25°C - Continuous Drain (Id)	9.3A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	300 milliohms @ 5.4A, 10V
Vgs(th) (max) at Id	4V @ 250μA
Gate Charge?(Qg) (max) at Vgs	35 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (max)	575 pF @ 25 V
FET Function	-
Power Dissipation (max)	82W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package/Case	TO-262-3, Long Lead, I2Pak, TO-262AA

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