IRFB4212PBF Infineon | Infineon agency

img for reference only

Mfr. #：

IRFB4212PBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 100 V 18A (Tc) 60W (Tc) TO-220AB

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	18 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10 V
On-Resistance (max) at Id, Vgs	72.5 mOhm @ 13 A, 10 V
Vgs(th) (max) at Id	5 V @ 250 μA
Gate Charge (Qg) (max) at Vgs	23 nC @ 10 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (max)	550 pF @ 50 V
FET Function	-
Power Dissipation (max)	60W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package/Case	TO-220-3

BAR5002VH6327XTSA1

Diode, RF/PIN, Single, 4.5 ohm, 50 V, SC-79, 2-pin, 0.4 pF
BAS5202VH6433XTMA1

Small Signal Schottky Diode, Single, 45 V, 500 mA, 600 mV, 2 A, 150 °C
BBY5702VH6327XTSA1

Variable Capacitance Diode, Varactor AEC-Q101, 18.6 pF, 20 mA, 10 V, 125 °C, SC-79, 2-pin
BAT60BE6359HTMA1

Schottky Rectifier, 10 V, 3 A, Single, SOD-323, 2 Pin, 600 mV
HFA08TB60PBF

Fast/Ultrafast Diode, 600 V, 8 A, Single, 1.7 V, 55 ns, 60 A
IDH08S120AKSA1

SiC Schottky Diode, ThinQ 2G 1200V Series, Single, 1.2 kV, 7.5 A, 27 nC, TO-220
HFA15PB60PBF

Fast/Ultrafast Diode, 600 V, 15 A, Single, 1.7 V, 60 ns, 150 A
IDP15E60XKSA1

Standard Recovery Diode, 600 V, 29.2 A, Single, 2 V, 60 A