IRF1902PBF Infineon | Infineon agency

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Mfr. #：

IRF1902PBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface Mount N Channel 20 V 4.2A (Ta) 2.5W (Ta) 8-SO

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	20 V
Current at 25°C - Continuous Drain (Id)	4.2A (Ta)
Drive Voltage (Rds On Max, Rds On Min)	2.7V, 4.5V
On-Resistance (max) at Id, Vgs	85 milliohms @ 4A, 4.5V
Vgs(th) (max) at Id	700mV @ 250μA
Gate Charge?(Qg) (max) at Vgs	7.5 nC @ 4.5 V
Vgs (max)	±12V
Input capacitance (Ciss) (max)	310 pF @ 15 V
FET function	-
Power dissipation (max)	2.5W (Ta)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	8-SO
Package/case	8-SOIC (0.154", 3.90mm width)

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