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IRF3709ZL Image

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Mfr. #:
IRF3709ZL
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 30 V 87A (Tc) 79W (Tc) TO-262
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Tubes
Discontinued
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 30 V
Current at 25°C - Continuous Drain (Id) 87A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (Max) at Different Id, Vgs 6.3 mOhm @ 21A, 10V
Vgs(th) (Max) at Different Id 2.25V @ 250μA
Gate Charge?(Qg) (Max) at Different Vgs 26 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 2130 pF @ 15 V
FET function -
Power dissipation (max) 79W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package TO-262
Package/case TO-262-3, long lead, I2Pak, TO-262AA
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