LOGO
LOGO
IRL3714Z Image

img for reference only

Mfr. #:
IRL3714Z
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 20 V 36A (Tc) 35W (Tc) TO-220AB
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Tubes
Discontinued
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 20 V
Current at 25°C - Continuous Drain (Id) 36A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (Max) @ Id, Vgs 16 milliohms @ 15A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250μA
Gate Charge?(Qg) (Max) @ Vgs 7.2 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 550 pF @ 10 V
FET function -
Power dissipation (max) 35W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package TO-220AB
Package/case TO-220-3
Related models
  • BAR5002VH6327XTSA1

    Diode, RF/PIN, Single, 4.5 ohm, 50 V, SC-79, 2-pin, 0.4 pF

  • BAS5202VH6433XTMA1

    Small Signal Schottky Diode, Single, 45 V, 500 mA, 600 mV, 2 A, 150 °C

  • BBY5702VH6327XTSA1

    Variable Capacitance Diode, Varactor AEC-Q101, 18.6 pF, 20 mA, 10 V, 125 °C, SC-79, 2-pin

  • BAT60BE6359HTMA1

    Schottky Rectifier, 10 V, 3 A, Single, SOD-323, 2 Pin, 600 mV

  • HFA08TB60PBF

    Fast/Ultrafast Diode, 600 V, 8 A, Single, 1.7 V, 55 ns, 60 A

  • IDH08S120AKSA1

    SiC Schottky Diode, ThinQ 2G 1200V Series, Single, 1.2 kV, 7.5 A, 27 nC, TO-220

  • HFA15PB60PBF

    Fast/Ultrafast Diode, 600 V, 15 A, Single, 1.7 V, 60 ns, 150 A

  • IDP15E60XKSA1

    Standard Recovery Diode, 600 V, 29.2 A, Single, 2 V, 60 A

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd