IRLR3714ZTR Infineon | Infineon agency

img for reference only

Mfr. #：

IRLR3714ZTR

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface Mount N Channel 20 V 37A (Tc) 35W (Tc) D-Pak

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	20 V
Current at 25°C - Continuous Drain (Id)	37A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (Max) at Different Id, Vgs	15 milliohms @ 15A, 10V
Vgs(th) (Max) at Different Id	2.55V @ 250μA
Gate Charge?(Qg) (Max) at Different Vgs	7.1 nC @ 4.5 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	560 pF @ 10 V
FET function	-
Power dissipation (max)	35W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Surface mount
Supplier device package	D-Pak
Package/case	TO-252-3, DPak (2-lead tab), SC-63

IDW30G120C5BFKSA1

Diode, SiC Schottky, thinQ 5G 1200V, Dual Common Cathode, 1.2 kV, 87 A, 154 nC, TO-247
IDW30G65C5XKSA1

Diode, SiC Schottky, thinQ, single, 650 V, 30 A, 42 nC, TO-247
IDK10G65C5XTMA2

Diode, SiC Schottky, thinQ Gen V, Single, 650 V, 10 A, 15 nC, TO-263 (D2PAK)
IDW40G65C5BXKSA2

Diode, SiC Schottky, thinQ Gen V, Dual Common Cathode, 650 V, 20 A, 29 nC, TO-247
IDL04G65C5XUMA2

Diode, SiC Schottky, thinQ Gen V, Single, 650 V, 4 A, 7 nC, VSON
IDW20G65C5BXKSA2

Diode, SiC Schottky, thinQ Gen V, Dual Common Cathode, 650 V, 10 A, 15 nC, TO-247
IDH02G65C5XKSA2

Diode, SiC Schottky, thinQ Gen V, Single, 650 V, 2 A, 4 nC, TO-220
BAR66E6327HTSA1

Diode, RF/PIN, Dual Series, 1.8 ohm, 150 V, SOT-23, 3-pin, 0.9 pF