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SPU08P06P Image

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Mfr. #:
SPU08P06P
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole P channel 60 V 8.83A (Ta) 42W (Tc) PG-TO251-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series SIPMOS?
Package Device
FET Type P-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 8.83A (Ta)
On-Resistance (max) at Id, Vgs 300 milliohms @ 6.2A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 13 nC @ 10 V
Input Capacitance (Ciss) (max) at Vds 420 pF @ 25 V
FET Function -
Power dissipation (max) 42W (Tc)
Operating temperature -
Mounting type Through hole
Supplier Device package PG-TO251-3
Package/case TO-251-3 Short lead, IPak, TO-251AA
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